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ossila材料P3HT

ossila材料P3HT
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价格:电议

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采购度:247    原产地:中国大陆

发布时间:2024/2/28 17:04:37

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详细信息

 A fabrication report with mobility measurements of 0.12 cm2/Vs for M104 can be found below.

All the P3HT below is highly soluble (50 mg/ml) in chlorinated solvents such as chloroform, chlorobenzene, dichlorobenzene and trichlorobenzene. The intermediate and lower molecular weight P3HT materials are recommended for use with non-chlorinated solvents such as xylene, toluene and THF due to their increased solubility.

General Information

Full name Poly(3-hexylthiophene-2,5-diyl)
Synonyms P3HT
CAS number 104934-50-1
Chemical formula (C10H14S)n
Molecular weight See the Batch Details table at bottom of the page for information
HOMO / LUMO HOMO = -5.2 eV, LUMO = -3.2 eV
Solubility Chloroform, chlorobenzene
Classification / Family Polythiophenes, Organic semiconducting materials, Low band gap polymers, Polymer donors, Organic photovoltaics, Polymer solar cells, OLEDs, OFETs

OFET Fabrication Routine

This procedure details the fabrication and charge mobility measurements for OFETs made from the M104 batch of P3HT. A full fabrication report can be downloaded here.

Field effect mobilities in excess of 0.12 cm2/Vs are recorded using M104 when the active layer is dispensed on OTS-treated silicon oxide dielectric by static spin coating from an optimized high/low boiling point solvent mix.

High hole mobility in conjunction with good solubility and partial air stability make regioregular P3HT a reference material of choice for both fundamental and applied research in organic electronic, physics and chemistry. As one of the most well-studied organic semiconductor, P3HT is often acknowledge to be one of the benchmark against which any new p-type or donor conjugate molecule should be compared and evaluated.

Mobility has previously been found to be positively correlated with increasing region-regularity, slow drying time (achieved using high boiling point solvent), lowering of the surface energy, and molecular weight in excess of 50 kD. These conditions favour p-p stacking parallels to the OFET substrate, which in turn results in improved charge transport across the transistor channel [1-13].

Substrate size 20 x 15 mm
Gate conductivity 1-30 O·cm (Boron doped)
Silicon oxide thickness 300 nm
Device per substrates Five, common gate
Channel length 30 µm
Channel width 1000 µm

The active layer solution preparation, spin coating, substrate annealing and measurements are performed in a glove box under a nitrogen atmosphere (H2O <0.1 PPM; O2 < 5/8 PPM).

更新时间:2024/4/1 15:43:56

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